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TIME-RESOLVED PHOTOLUMINESCENCE MEASUREMENT OF CARRIER TRAPPING TIME OF INGAAS/INP QUANTUM WELLS

Abstract:
We have measured the diffusion and trapping of photoexcited hot carriers in a InGaAs/InP heterostructure using an optical time-of-flight technique with picosecond time resolution. The efficiency of trapping of carriers into the well is found to increase rapidly between 4 K and room temperature. A mean trapping time of 4 ps is measured for a 50 Å well. © 1987.
Publication status:
Published

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Journal:
SURFACE SCIENCE
Volume:
196
Issue:
1-3
Pages:
399-403
Publication date:
1988-03-05
DOI:
ISSN:
0039-6028
URN:
uuid:c92d97c1-674b-49dd-868b-d36e77294f9f
Source identifiers:
3656
Local pid:
pubs:3656
Language:
English

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