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Stacking-fault imaging using transmission ion channeling.

Abstract:

This paper gives a detailed analysis of the necessary conditions for observing stacking faults using transmission ion channeling. It is shown that transmission ion channeling images of individual stacking faults at least 10 m below the surface of a 40-m-thick silicon crystal can be produced by mapping the mean energy loss of channeled 3-MeV protons. The observed image contrast depends on whether axial or planar alignment is used and, in planar alignment, increases on going from {100} to {110}...

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Publication status:
Published

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Publisher copy:
10.1103/physrevb.51.2732

Authors


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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
Journal:
Physical review. B, Condensed matter More from this journal
Volume:
51
Issue:
5
Pages:
2732-2741
Publication date:
1995-02-01
DOI:
EISSN:
1095-3795
ISSN:
0163-1829
Language:
English
Pubs id:
pubs:23387
UUID:
uuid:c9135249-bb9b-497d-ab96-4a6701f0b40c
Local pid:
pubs:23387
Source identifiers:
23387
Deposit date:
2012-12-19

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