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Strain relaxation by alloying effects in Ge islands grown on Si(001)

Publication status:: Published

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APA Style

Liao, X., Zou, J., Cockayne, D., Qin, J., Jiang, Z., Wang, X., & Leon, R. (1999). Strain relaxation by alloying effects in Ge islands grown on Si(001). Physical Review B, 60(23), 15605–15608.

MLA Style

Liao, X., et al. “Strain Relaxation by Alloying Effects in Ge Islands Grown on Si(001).” Physical Review B, vol. 60, no. 23, 1999, pp. 15605–08.

Chicago Style

Liao, X, J Zou, D Cockayne, J Qin, Z Jiang, X Wang, and R Leon. 1999. “Strain Relaxation by Alloying Effects in Ge Islands Grown on Si(001).” Physical Review B 60 (23): 15605–8.
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Publisher copy:: 10.1103/PhysRevB.60.15605

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+ Zou, J More by this author

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+ Cockayne, D More by this author

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+ Qin, J More by this author

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+ Jiang, Z More by this author

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Bibliographic Details

Journal:: Physical Review B
Volume:: 60
Issue:: 23
Pages:: 15605-15608
Publication date:: 1999-12-15
DOI:: 10.1103/PhysRevB.60.15605
EISSN:: 1095-3795
ISSN:: 1098-0121

Item Description

Pubs id:: pubs:21553
UUID:: uuid:c89d4480-9dfc-4dbd-a27f-9e67b803437e
Local pid:: pubs:21553
Source identifiers:: 21553
Deposit date:: 2012-12-19

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Copyright date:: 1999

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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