Room temperature sub-bandgap photoluminescence from silicon containing oxide precipitates

Journal article

Room temperature photoluminescence was measured from p-type Czochralski silicon processed to contain oxide precipitates. No detectable luminescence was associated with unstrained oxide precipitates. Strained oxide precipitates gave rise to a broad luminescence peak centred at ∼1600 nm. The intensity of the peak increased with the density of strained precipitates, with band-to-band luminescence being reduced correspondingly. Dislocations and stacking faults around the strained precipitates wer...

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Authors: Bothe, K; Falster, R; Murphy, J

• Publication status: Published
• Journal: APPLIED PHYSICS LETTERS
• Volume: 101
• Issue: 3
• Pages: 032107-032107
• Publication date: 2012-07-16
• DOI: 10.1063/1.4737175
• ISSN: 0003-6951
• Language: English