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Enhanced ferroelectric property of P(VDF-TrFE-CTFE) film using room temperature crystallization for high-performance ferroelectric device applications

Abstract:
The ferroelectric β-phase in a poly(vinylidenefluoride-trifluoroethylene-chlorotrifluoroethylene) film is successfully formed using a room temperature solvent-annealing process and shows enhanced ferroelectricity compared to a thermally annealed film. Applications in electronics and energy are demonstrated with significantly enhanced device performances for a solvent annealing (SA) film employed devices compared to a thermal annealing film employed due to enhanced ferroelectricity of the SA film.
Publication status:
Published
Peer review status:
Peer reviewed
Version:
Accepted Manuscript

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Publisher copy:
10.1002/aelm.201600225

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Department:
Oxford, MPLS, Engineering Science
Ahn, Docheon More by this author
Park, Jong Bae More by this author
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Department:
Oxford, MPLS, Engineering Science
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Department:
Oxford, MPLS, Engineering Science
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Publisher:
Wiley Publisher's website
Journal:
Advanced Electronic Materials Journal website
Volume:
2
Issue:
10
Pages:
Article: 1600225
Publication date:
2016-08-11
Acceptance date:
2016-07-27
DOI:
EISSN:
2199-160X
Pubs id:
pubs:638396
URN:
uri:c826b75a-dc5c-4420-8602-f7b2fc671e94
UUID:
c826b75a-dc5c-4420-8602-f7b2fc671e94
Local pid:
pubs:638396

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