Improvement of minority carrier lifetime in GaAs/AlxGa 1-xAs core-shell nanowires

Conference item

GaAs/AlxGa1-xAs core-shell nanowires were grown by metal organic chemical vapour deposition with Au-catalysed GaAs cores. Cross-section transmission electron microscope bright field images show that the tapering at bottom of the nanowires is mainly caused by GaAs cap growth. Time-resolved photo-luminescence measurements of single nanowires were taken at room temperature and a minority carrier lifetime of (1.02±0.43) ns was obtained for single nanowires with AlxGa1-xAs shell grown at 750°C. A ...

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Authors: Jiang, N; Parkinson, P; Gao, Q; Wong-Leung, J; Breuer, S

• Host title: Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
• Pages: 33-34
• Publication date: 2012-01-01
• DOI: 10.1109/COMMAD.2012.6472346
• ISBN: 9781467330459