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Transmission electron microscopy investigation of semiconductor quantum dots

Abstract:
Transmission electron microscopy was used to study InGaAs/GaAs and Ge(Si)/Si quantum dots. Results on the detailed microstructural investigation using plan-view [001] zone-axis bright-field diffraction contrast imaging technique combined with image simulations are presented.
Publication status:
Published

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Journal:
SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS
Pages:
217-223
Publication date:
2000-01-01
Event title:
11th International Semiconducing and Insulating Materials Conference (SIMC-XI)
Source identifiers:
15876
ISBN:
0780358155
Keywords:
Pubs id:
pubs:15876
UUID:
uuid:c6d04a7b-ace0-407f-a1e3-68097d84cccb
Local pid:
pubs:15876
Deposit date:
2012-12-19

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