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Transmission electron microscopy investigation of semiconductor quantum dots

Abstract:
Transmission electron microscopy was used to study InGaAs/GaAs and Ge(Si)/Si quantum dots. Results on the detailed microstructural investigation using plan-view [001] zone-axis bright-field diffraction contrast imaging technique combined with image simulations are presented.
Publication status:
Published

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Pages:
217-223
Publication date:
2000-01-01
URN:
uuid:c6d04a7b-ace0-407f-a1e3-68097d84cccb
Source identifiers:
15876
Local pid:
pubs:15876
ISBN:
0-7803-5815-5

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