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High vertical yield InP nanowire growth on Si(111) using a thin buffer layer.

Abstract:

We demonstrate the growth of InP nanowires on Si(111) using a thin InP buffer layer. The buffer layer is grown using a two-step procedure. The initial layer formation is ensured by using a very low growth temperature. An extremely high V/III ratio is necessary to prevent In droplet formation at this low temperature. The second layer is grown on the initial layer at a higher temperature and we find that post-growth annealing of the buffer layer does not improve its crystal quality significantl...

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Publication status:
Published

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Authors


Fonseka, HA More by this author
Wong-Leung, J More by this author
Parkinson, P More by this author
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Journal:
Nanotechnology
Volume:
24
Issue:
46
Pages:
465602
Publication date:
2013-11-05
DOI:
EISSN:
1361-6528
ISSN:
0957-4484
URN:
uuid:c5babb36-d6f3-4045-b53b-9a61b3c9fcd4
Source identifiers:
439214
Local pid:
pubs:439214
Language:
English

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