- Abstract:
-
We demonstrate the growth of InP nanowires on Si(111) using a thin InP buffer layer. The buffer layer is grown using a two-step procedure. The initial layer formation is ensured by using a very low growth temperature. An extremely high V/III ratio is necessary to prevent In droplet formation at this low temperature. The second layer is grown on the initial layer at a higher temperature and we find that post-growth annealing of the buffer layer does not improve its crystal quality significantl...
Expand abstract - Publication status:
- Published
- Publisher copy:
- 10.1088/0957-4484/24/46/465602
-
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- Journal:
- Nanotechnology
- Volume:
- 24
- Issue:
- 46
- Pages:
- 465602
- Publication date:
- 2013-11-05
- DOI:
- EISSN:
-
1361-6528
- ISSN:
-
0957-4484
- URN:
-
uuid:c5babb36-d6f3-4045-b53b-9a61b3c9fcd4
- Source identifiers:
-
439214
- Local pid:
- pubs:439214
- Language:
- English
- Copyright date:
- 2013
Journal article
High vertical yield InP nanowire growth on Si(111) using a thin buffer layer.
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