Conference item
Recombination-enhanced diffusion of self-interstitial atoms and vacancy-interstitial recombination in diamond
- Abstract:
-
In this paper we report the results of EPR and optical studies on vacancies and interstitials produced in type IIa diamond irradiated with 2-MeV electrons at temperatures between 90 and 900 K. Post-irradiation annealing studies at temperatures up to 1900 K were also performed. Data showing recombination-enhanced diffusion of self-interstitial atoms in diamond is presented and our analysis of the phenomena leads us to the conclusion that a highly mobile interstitial I* (possibly a charged/neut...
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- Publication status:
- Published
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Bibliographic Details
- Journal:
- DIAMOND AND RELATED MATERIALS
- Volume:
- 11
- Issue:
- 3-6
- Pages:
- 618-622
- Publication date:
- 2002-01-01
- Event title:
- 12th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide (Diamond 2001)
- DOI:
- ISSN:
-
0925-9635
Item Description
- Keywords:
- Pubs id:
-
pubs:19048
- UUID:
-
uuid:c43d2f68-a749-4f14-997d-844a5deeca16
- Local pid:
- pubs:19048
- Source identifiers:
-
19048
- Deposit date:
- 2012-12-19
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- Copyright date:
- 2002
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