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SIMPLE TECHNIQUE FOR MEASURING DOPING EFFECTS ON DISLOCATION MOTION IN SILICON.

Abstract:

A microindentation-based technique has been developed to investigate the influence of doping on dislocation motion in semiconductors and insulators. It allows investigation of the doping effect using simple equipment and small, easily-prepared, specimens. The technique involves high temperature indentation using a standard microhardness tester equipped with a hot-stage, followed by controlled annealing and etching to reveal the dislocation arrays ('rosettes') around indentations. The size of ...

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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Role:
Author
Journal:
Journal de Physique (Paris), Colloque
Volume:
44
Issue:
9
Pages:
75-83
Publication date:
1983-09-05
ISSN:
0449-1947
URN:
uuid:c353bdfa-d7e8-4ac1-88c8-b3b1cb282228
Source identifiers:
430644
Local pid:
pubs:430644
Language:
English

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