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Cyclotron resonance in an asymmetric electron-hole InAs/GaSb DHET structure

Abstract:
The influence of the interface states on the cyclotron resonance (CR) of the broken-gap two carrier InAs/GaSb DHET system has been investigated. Enhanced coupling between electron and hole levels is observed in the samples with a monolayer of InSb formed at one of the interfaces, leading to evidence of strong interband transitions close to that of the electron CR. This is believed to be the result of the asymmetry introduced into the structure. The results are consistent with the theoretical analysis from self-consistent k·p calculations.
Publication status:
Published

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Authors


Petchsingh, C More by this author
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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
Poulter, AJL More by this author
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Publisher:
Elsevier Sci B.V.
Journal:
PHYSICA E
Volume:
6
Issue:
1-4
Pages:
660-663
Publication date:
2000-02-05
DOI:
ISSN:
1386-9477
URN:
uuid:c2b960a6-fc39-4ae5-8b1f-b33e9baef7fd
Source identifiers:
17902
Local pid:
pubs:17902
Language:
English
Keywords:

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