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Electron-hole interactions and metal-insulator transitions in InAs/GaSb heterostructures

Abstract:

InAs/GaSb heterojunctions form bipolar 2-D layers due to the overlapping conduction and valence bands. Such systems have generated considerable interest recently due to the possibilities of gap formation by both excitonic and single particle interactions. The quantum Hall effect in this system shows a digital sequence oscillating from 0-1-0 conductance quanta and the diagonal resistivity, p. shows re-entrant insulating behaviour due to the formation of a total gap in the energy spectrum. The ...

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Publication status:
Published

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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
Takashima, K More by this author
Kardynal, B More by this author
Petchsingh, C More by this author
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Volume:
2
Pages:
9-12
Publication date:
2001
URN:
uuid:c0aa428b-7bf4-4d69-8404-40cf626ae097
Source identifiers:
17303
Local pid:
pubs:17303
ISBN:
4-900526-14-2

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