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GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS

Abstract:
Selected results from a TEM study of copper precipitation at extended surface defects in silicon are reported. The relative getting effectiveness of surface pits, oxidation induced stacking faults, and their bounding partials is compared. Copper-silicide precipitate colonies on {111} planes are observed for the first time and are found to nucleate at the bounding partials of oxidation induced stacking faults.
Publication status:
Published

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Authors


DECOTEAU, M More by this author
WILSHAW, P More by this author
FALSTER, R More by this author
Publisher:
Publ by Inst of Physics Publ Ltd
Journal:
INSTITUTE OF PHYSICS CONFERENCE SERIES
Issue:
117
Pages:
231-234
Publication date:
1991
ISSN:
0951-3248
URN:
uuid:c063c1db-8fdb-4043-9577-f8d839dc7919
Source identifiers:
5874
Local pid:
pubs:5874
Language:
English

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