- Publication status:
- Published
- Publisher copy:
- 10.1063/1.122018
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- Journal:
- APPLIED PHYSICS LETTERS
- Volume:
- 73
- Issue:
- 6
- Pages:
- 838-840
- Publication date:
- 1998-08-10
- DOI:
- ISSN:
-
0003-6951
- URN:
-
uuid:c03d8018-6f9d-404f-8a2c-e46a61e2da7b
- Source identifiers:
-
22981
- Local pid:
- pubs:22981
- Copyright date:
- 1998
Journal article
Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature
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