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Journal article

Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature

Publication status:
Published

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Publisher copy:
10.1063/1.122018

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Journal:
APPLIED PHYSICS LETTERS
Volume:
73
Issue:
6
Pages:
838-840
Publication date:
1998-08-10
DOI:
ISSN:
0003-6951
URN:
uuid:c03d8018-6f9d-404f-8a2c-e46a61e2da7b
Source identifiers:
22981
Local pid:
pubs:22981

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