Journal article
Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature
- Publication status:
- Published
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- Publisher copy:
- 10.1063/1.122018
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Bibliographic Details
- Journal:
- APPLIED PHYSICS LETTERS
- Volume:
- 73
- Issue:
- 6
- Pages:
- 838-840
- Publication date:
- 1998-08-10
- DOI:
- ISSN:
-
0003-6951
- Source identifiers:
-
22981
Item Description
- Pubs id:
-
pubs:22981
- UUID:
-
uuid:c03d8018-6f9d-404f-8a2c-e46a61e2da7b
- Local pid:
- pubs:22981
- Deposit date:
- 2012-12-19
Terms of use
- Copyright date:
- 1998
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