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The effect of impurity-induced lattice strain and Fermi level position on low temperature oxygen diffusion in silicon

Abstract:

Oxygen diffusion in silicon is known to be affected by high concentrations of impurities, although the mechanism underpinning this is poorly understood. We have studied oxygen transport in Czochralski silicon by analyzing data on the locking of dislocations by oxygen as a function of time and temperature. In this paper, we present new data from crystals grown to contain high levels of germanium and arsenic. We analyze these new data, together with our previous data for silicon with a high bor...

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Publication status:
Published

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Publisher copy:
10.1063/1.3555625

Authors


Murphy, JD More by this author
Falster, RJ More by this author
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Journal:
JOURNAL OF APPLIED PHYSICS
Volume:
109
Issue:
6
Pages:
063532-063532
Publication date:
2011-03-15
DOI:
ISSN:
0021-8979
URN:
uuid:c01eed50-aa5a-42b4-9bf7-92215c428ffd
Source identifiers:
176452
Local pid:
pubs:176452
Language:
English

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