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Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors

Abstract:

We investigate the impact of a fluorine plasma treatment used to obtain enhancement-mode operation on the structure and chemistry at the nanometer and atomic scales of an InAlN/GaN field effect transistor. The fluorine plasma treatment is successful in that enhancement mode operation is achieved with a +2.8 V threshold voltage. However, the InAlN barrier layers are observed to have been damaged by the fluorine treatment with their thickness being reduced by up to 50%. The treatment also led t...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Publisher's version

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Publisher copy:
10.1063/1.5006255

Authors


Frentrup, M More by this author
Barnard, JS More by this author
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More from this funder
Grant:
FP7/2007- 2013)/ERC No. 279361 (MACONS)
More from this funder
Grant:
Silicon Compatible GaN Power Electronics (No. EP/K014471/1).
Publisher:
AIP Publishing Publisher's website
Journal:
Journal of Applied Physics Journal website
Volume:
123
Issue:
2
Pages:
Article: 024902
Publication date:
2018-01-09
Acceptance date:
2017-12-15
DOI:
EISSN:
1089-7550
ISSN:
0021-8979
Pubs id:
pubs:821680
URN:
uri:bd6f4889-4988-47ea-b5eb-6f40319d3247
UUID:
uuid:bd6f4889-4988-47ea-b5eb-6f40319d3247
Local pid:
pubs:821680

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