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1ST OBSERVATION OF THE QUANTUM HALL-EFFECT IN A GA0.47IN0.53AS-INP HETEROSTRUCTURE WITH 3 ELECTRIC SUBBANDS

Abstract:

Shubnikov-de Haas and quantum Hall effects have been studied in GaInAs-InP heterojunctions grown by modified low pressure metalorganic chemical vapor deposition. In contrast to the results reported up till now on GaInAs-InP heterojunctions with nearly the same channel electron density, not one but three electric subbands, E0, E1, and E2, are occupied in zero magnetic field. Two electric subbands E0 and E 1 contribute to the quantum Hall effect. Magnetic depopulation of the higher (E1 and E2) ...

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Publication status:
Published

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Publisher copy:
10.1063/1.96698

Authors


RAZEGHI, M More by this author
DUCHEMIN, J More by this author
DMOWSKI, L More by this author
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Journal:
APPLIED PHYSICS LETTERS
Volume:
48
Issue:
11
Pages:
712-714
Publication date:
1986-03-17
DOI:
ISSN:
0003-6951
URN:
uuid:bc17dc46-c13d-4d44-8be7-7cfe3fcf72a1
Source identifiers:
3511
Local pid:
pubs:3511
Language:
English

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