Journal article
Band-gap shrinkage in n-type-doped CdO probed by photoemission spectroscopy
- Abstract:
- The influence of n-type doping CdO with In or Y has been investigated by high-resolution ultraviolet and x-ray photoemission spectroscopy. It is found that core levels and valence band features suffer a shift to high binding energy due to doping. However this shift is less than the change in the width of the occupied conduction band. This provides a direct measurement of band gap shrinkage as a result of doping in an oxide semiconductor.
- Publication status:
- Published
- Peer review status:
- Peer reviewed
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Authors
Bibliographic Details
- Publisher:
- American Physical Society
- Journal:
- Physical Review B More from this journal
- Volume:
- 55
- Issue:
- 20
- Pages:
- R13 381 - R13 384
- Publication date:
- 1997-05-01
- EISSN:
-
1550-235x
- ISSN:
-
1098-0211
Item Description
- Language:
-
English
- Keywords:
- Subjects:
- UUID:
-
uuid:bbe5f727-57e7-4c20-9234-d69319f73bcb
- Local pid:
-
ora:1420
- Deposit date:
-
2008-03-14
Terms of use
- Copyright holder:
- The American Physical Society
- Copyright date:
- 1997
- Notes:
- Citation: Dou, Y. et al. (1997). 'Band-gap shrinkage in n-type-doped CdO probed by photoemission spectroscopy', Physical Review B, 55(20), R13 381 - R13 384. [Available at http://prb.aps.org/]. © 1997 The American Physical Society.
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