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Band-gap shrinkage in n-type-doped CdO probed by photoemission spectroscopy

Abstract:
The influence of n-type doping CdO with In or Y has been investigated by high-resolution ultraviolet and x-ray photoemission spectroscopy. It is found that core levels and valence band features suffer a shift to high binding energy due to doping. However this shift is less than the change in the width of the occupied conduction band. This provides a direct measurement of band gap shrinkage as a result of doping in an oxide semiconductor.
Publication status:
Published
Peer review status:
Peer reviewed

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Institution:
University of Oxford
Division:
MPLS
Department:
Chemistry
Sub department:
Inorganic Chemistry
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Chemistry
Sub department:
Inorganic Chemistry
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Chemistry
Sub department:
Inorganic Chemistry
Role:
Author
More by this author
Institution:
"Research Unit for Surfaces, Transforms and Interfaces, Daresbury Laboratory, Warrington, UK"
Role:
Author
More by this author
Institution:
"Research Unit for Surfaces, Transforms and Interfaces, Daresbury Laboratory, Warrington, UK"
Role:
Author
Publisher:
American Physical Society Publisher's website
Journal:
Physical Review B Journal website
Volume:
55
Issue:
20
Pages:
R13 381 - R13 384
Publication date:
1997-05-01
EISSN:
1550-235x
ISSN:
1098-0211
Language:
English
Keywords:
Subjects:
UUID:
uuid:bbe5f727-57e7-4c20-9234-d69319f73bcb
Local pid:
ora:1420
Deposit date:
2008-03-14

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