- The influence of n-type doping CdO with In or Y has been investigated by high-resolution ultraviolet and x-ray photoemission spectroscopy. It is found that core levels and valence band features suffer a shift to high binding energy due to doping. However this shift is less than the change in the width of the occupied conduction band. This provides a direct measurement of band gap shrinkage as a result of doping in an oxide semiconductor.
- Publication status:
- Peer review status:
- Peer reviewed
- Publisher's version
- Copyright holder:
- The American Physical Society
- Copyright date:
- Citation: Dou, Y. et al. (1997). 'Band-gap shrinkage in n-type-doped CdO probed by photoemission spectroscopy', Physical Review B, 55(20), R13 381 - R13 384. [Available at http://prb.aps.org/]. © 1997 The American Physical Society.
Band-gap shrinkage in n-type-doped CdO probed by photoemission spectroscopy
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