Carrier storage and capture dynamics in quantum-dot heterostructures

Journal article

Single dot photoluminescence and ensemble time-resolved photoluminescence was used to demonstrate bias-controlled hole storage and capture in charge-tunable heterostructures. The measurements revealed that by appropriate biasing of the device, about 90% of photogenerated holes can be stored at an interface near to the nanostructures. The capture rate dependence on applied electric field showed that the valence band confinement potential is 'soft' in the capping layer.

Authors: Smith, J; Dalgarno, P; Urbaszek, B; McGhee, E; Buller, G

• Publication status: Published
• Journal: APPLIED PHYSICS LETTERS
• Volume: 82
• Issue: 21
• Pages: 3761-3763
• Publication date: 2003-05-26
• DOI: 10.1063/1.1577830
• ISSN: 0003-6951
• Language: English