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Carrier storage and capture dynamics in quantum-dot heterostructures

Abstract:
Single dot photoluminescence and ensemble time-resolved photoluminescence was used to demonstrate bias-controlled hole storage and capture in charge-tunable heterostructures. The measurements revealed that by appropriate biasing of the device, about 90% of photogenerated holes can be stored at an interface near to the nanostructures. The capture rate dependence on applied electric field showed that the valence band confinement potential is 'soft' in the capping layer.
Publication status:
Published

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Publisher copy:
10.1063/1.1577830

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
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Journal:
APPLIED PHYSICS LETTERS
Volume:
82
Issue:
21
Pages:
3761-3763
Publication date:
2003-05-26
DOI:
ISSN:
0003-6951
Source identifiers:
3602
Language:
English
Pubs id:
pubs:3602
UUID:
uuid:bb00e47c-7554-483b-942d-6a2cbecf7a45
Local pid:
pubs:3602
Deposit date:
2012-12-19

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