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Origins of Spectral Diffusion in the Micro-Photoluminescence of Single InGaN Quantum Dots

Abstract:

We report on optical characterization of self-assembled InGaN quantum dots (QDs) grown on three GaN pseudo-substrates with differing threading dislocation densities. QD density is estimated via microphotoluminscence on a masked sample patterned with circular apertures, and appears to increase with dislocation density. A non-linear excitation technique is used to observe the sharp spectral lines characteristic of QD emission. Temporal variations of the wavelength of emission from single QDs ar...

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Publication status:
Published

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Publisher copy:
10.7567/JJAP.52.08JE01

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Journal:
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume:
52
Issue:
8
Pages:
08JE01-08JE01
Publication date:
2013-08-01
DOI:
EISSN:
1347-4065
ISSN:
0021-4922
Source identifiers:
425651
Language:
English
Pubs id:
pubs:425651
UUID:
uuid:b84128b7-0f4c-46c9-9768-3be69ab66699
Local pid:
pubs:425651
Deposit date:
2013-11-16

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