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EFFECTS OF EXTENDED LATTICE-DEFECTS ON SILICON SEMICONDUCTOR-DEVICES

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APA Style

Kolbesen, B., Bergholz, W., Cerva, H., Gelsdorf, F., Wendt, H., & Zoth, G. (1989). EFFECTS OF EXTENDED LATTICE-DEFECTS ON SILICON SEMICONDUCTOR-DEVICES. STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989, 104, 421–430.

MLA Style

Kolbesen, B., et al. “EFFECTS OF EXTENDED LATTICE-DEFECTS ON SILICON SEMICONDUCTOR-DEVICES.” STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989, vol. 104, 1989, pp. 421–30.

Chicago Style

Kolbesen, B, W Bergholz, H Cerva, F Gelsdorf, H Wendt, and G Zoth. 1989. “EFFECTS OF EXTENDED LATTICE-DEFECTS ON SILICON SEMICONDUCTOR-DEVICES.” In STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989, 104:421–30.
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+ Kolbesen, B More by this author

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+ Bergholz, W More by this author

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+ Cerva, H More by this author

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+ Gelsdorf, F More by this author

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+ Wendt, H More by this author

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Bibliographic Details

Journal:: STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989
Volume:: 104
Pages:: 421-430
Publication date:: 1989-01-01
Event title:: 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS
ISBN:: 0854980601

Item Description

Keywords:: INDUCED STACKING-FAULTS

IMPURITIES

BREAKDOWN

ELIMINATION

WAFER

oxides

SURFACE

LEAKAGE
Pubs id:: pubs:19358
UUID:: uuid:b7bd88d9-566d-4ead-bb1e-75f437ed8b4a
Local pid:: pubs:19358
Source identifiers:: 19358
Deposit date:: 2012-12-19

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Copyright date:: 1989

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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