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THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON

Abstract:

The EBIC mode of the SEM has been used to study the electronic properties of individual dislocations in silicon at high spatial resolution. A theory of EBIC, relating the contrast to the fundamental defect parameters, such as the carrier lifetime in the vicinity of the defect, is presented. A means for the determination of defect energy levels at high spatial resolution is proposed. First results of a project designed to yield information on the energy levels associated with dislocations in S...

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Publication status:
Published

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Journal:
PHYSICA B and C
Volume:
116
Issue:
1-3
Pages:
600-605
Publication date:
1983-01-01
DOI:
ISSN:
0378-4371
URN:
uuid:b78bb484-cb9f-4619-9b72-668da18d028e
Source identifiers:
24632
Local pid:
pubs:24632
Language:
English

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