Journal article icon

Journal article

THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON

Abstract:

The EBIC mode of the SEM has been used to study the electronic properties of individual dislocations in silicon at high spatial resolution. A theory of EBIC, relating the contrast to the fundamental defect parameters, such as the carrier lifetime in the vicinity of the defect, is presented. A means for the determination of defect energy levels at high spatial resolution is proposed. First results of a project designed to yield information on the energy levels associated with dislocations in S...

Expand abstract
Publication status:
Published

Actions


Access Document


Authors


OURMAZD, A More by this author
WILSHAW, P More by this author
Journal:
PHYSICA B and C
Volume:
116
Issue:
1-3
Pages:
600-605
Publication date:
1983
DOI:
ISSN:
0378-4371
URN:
uuid:b78bb484-cb9f-4619-9b72-668da18d028e
Source identifiers:
24632
Local pid:
pubs:24632
Language:
English

Terms of use


Metrics



If you are the owner of this record, you can report an update to it here: Report update to this record

TO TOP