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GETTERING OF COPPER TO OXIDATION INDUCED STACKING-FAULTS IN SILICON

Abstract:

Results are presented from an investigation concerning the influence of oxidation-induced stacking faults, their bounding partial dislocations, and mechanically-induced surface pits on the precipitation behaviour of copper in silicon. Controlled amounts of copper are diffused into wafers containing such defect structures so that their effect on precipitation behaviour can be studied using TEM and preferential etching techniques. These studies indicate the relative efficiencies of the differen...

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Publication status:
Published

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Publisher copy:
10.1002/pssa.2211170209

Authors


DECOTEAU, M More by this author
WILSHAW, P More by this author
FALSTER, R More by this author
Journal:
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
Volume:
117
Issue:
2
Pages:
403-408
Publication date:
1990-02-16
DOI:
EISSN:
1521-396X
ISSN:
0031-8965
URN:
uuid:b74e6b1d-768c-4333-b292-eaaf1f2c2622
Source identifiers:
28717
Local pid:
pubs:28717
Language:
English

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