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Self-organized amorphous material in silicon(001) by focused ion beam (FIB) system

Abstract:

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga+ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce rec...

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Publication status:
Published

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Authors


Cockayne, DJH More by this author
Titchmarsh, JM More by this author
Petford-Long, AK More by this author
Journal:
APPLIED SURFACE SCIENCE
Volume:
252
Issue:
5
Pages:
1954-1958
Publication date:
2005-12-15
DOI:
ISSN:
0169-4332
URN:
uuid:b70e9f06-fbda-467f-b983-bf19d4835828
Source identifiers:
21421
Local pid:
pubs:21421
Language:
English
Keywords:

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