ANALYSIS OF DEFECTS IN BULK SEMICONDUCTORS USING ELECTRON CHANNELING CONTRAST IMAGING - ORA - Oxford University Research Archive

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ANALYSIS OF DEFECTS IN BULK SEMICONDUCTORS USING ELECTRON CHANNELING CONTRAST IMAGING

Publication status:: Published

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APA Style

Czernuszka, J., Long, N., & Hirsch, P. (2016). ANALYSIS OF DEFECTS IN BULK SEMICONDUCTORS USING ELECTRON CHANNELING CONTRAST IMAGING. INSTITUTE OF PHYSICS CONFERENCE SERIES, 117, 771–774.

MLA Style

Czernuszka, J., et al. “ANALYSIS OF DEFECTS IN BULK SEMICONDUCTORS USING ELECTRON CHANNELING CONTRAST IMAGING.” INSTITUTE OF PHYSICS CONFERENCE SERIES, no. 117, 2016, pp. 771–74.

Chicago Style

Czernuszka, J, N Long, and P Hirsch. 2016. “ANALYSIS OF DEFECTS IN BULK SEMICONDUCTORS USING ELECTRON CHANNELING CONTRAST IMAGING.” INSTITUTE OF PHYSICS CONFERENCE SERIES, no. 117: 771–74.
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+ Czernuszka, J More by this author

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+ Long, N More by this author

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+ Hirsch, P More by this author

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Bibliographic Details

Journal:: INSTITUTE OF PHYSICS CONFERENCE SERIES
Issue:: 117
Pages:: 771-774
Publication date:: 1991-01-01
ISSN:: 0951-3248
Source identifiers:: 26331

Item Description

Pubs id:: pubs:26331
UUID:: uuid:b6c13407-d32b-48b8-a39a-a16296fbb0d5
Local pid:: pubs:26331
Deposit date:: 2012-12-19

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Copyright date:: 1991

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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