Journal article icon

Journal article

SURFACE DECOMPOSITION MECHANISM OF THE NOVEL PRECURSOR BISTRIMETHYLAMINE ALUMINUM-HYDRIDE ON GAAS(100)

Abstract:

The surface decomposition mechanism of bistrimethylamine aluminium hydride [(Me3N)2 · AIH3] on the Ga-rich (4 × 1) GaAs (100) surface is studied by TDS, HREELS and XPS. It is found that the first monolayer of the complex chemisorbs molecularly at 150 K. The decomposition pathway is shown to involve the activated dissociation of this chemisorbed precursor to produce Al, adsorbed H atoms and trimethylamine. The latter species desorb without further fragmentation and this key feature results in ...

Expand abstract
Publication status:
Published

Actions


Access Document


Authors


Journal:
VACUUM
Volume:
41
Issue:
4-6
Pages:
968-971
Publication date:
1990-01-01
DOI:
ISSN:
0042-207X
URN:
uuid:b678ea20-6205-4c60-b13e-fbe05852db59
Source identifiers:
43450
Local pid:
pubs:43450
Language:
English

Terms of use


Metrics


Views and Downloads






If you are the owner of this record, you can report an update to it here: Report update to this record

TO TOP