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SURFACE DECOMPOSITION MECHANISM OF THE NOVEL PRECURSOR BISTRIMETHYLAMINE ALUMINUM-HYDRIDE ON GAAS(100)

Abstract:

The surface decomposition mechanism of bistrimethylamine aluminium hydride [(Me3N)2 · AIH3] on the Ga-rich (4 × 1) GaAs (100) surface is studied by TDS, HREELS and XPS. It is found that the first monolayer of the complex chemisorbs molecularly at 150 K. The decomposition pathway is shown to involve the activated dissociation of this chemisorbed precursor to produce Al, adsorbed H atoms and trimethylamine. The latter species desorb without further fragmentation and this key feature results in ...

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Publication status:
Published

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Journal:
VACUUM
Volume:
41
Issue:
4-6
Pages:
968-971
Publication date:
1990-01-01
DOI:
ISSN:
0042-207X
Source identifiers:
43450
Language:
English
Pubs id:
pubs:43450
UUID:
uuid:b678ea20-6205-4c60-b13e-fbe05852db59
Local pid:
pubs:43450
Deposit date:
2012-12-19

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