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Nanowires for optoelectronic device applications

Abstract:

GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this paper, we will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters for GaAs and InP nanowires on the crystal quality were studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires via either two-temperature procedure, or by controlling V/III...

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Publisher copy:
10.1002/pssc.200982528

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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics
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Journal:
Physica Status Solidi (C) Current Topics in Solid State Physics
Volume:
6
Issue:
12
Pages:
2678-2682
Publication date:
2009
DOI:
EISSN:
1610-1642
ISSN:
1862-6351
URN:
uuid:b458f493-e941-43ba-b63d-11695da13d95
Source identifiers:
172768
Local pid:
pubs:172768
Language:
English

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