Journal article

Band-gap shrinkage in n-type-doped CdO probed by photoemission spectroscopy

Abstract:: The influence of n-type doping CdO with In or Y has been investigated by high-resolution ultraviolet and x-ray photoemission spectroscopy. It is found that core levels and valence band features suffer a shift to high binding energy due to doping. However this shift is less than the change in the width of the occupied conduction band. This provides a direct measurement of band gap shrinkage as a result of doping in an oxide semiconductor.

Publication status:: Published

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APA Style

Dou, Y., Fishlock, T., Egdell, R., Law, D., & Beamson, G. (1997). Band-gap shrinkage in n-type-doped CdO probed by photoemission spectroscopy. Physical Review B, 55(20), 13381–13384.

MLA Style

Dou, Y., et al. “Band-Gap Shrinkage in n-Type-Doped CdO Probed by Photoemission Spectroscopy.” Physical Review B, vol. 55, no. 20, 1997, pp. 13381–84.

Chicago Style

Dou, Y, T Fishlock, R Egdell, D Law, and G Beamson. 1997. “Band-Gap Shrinkage in n-Type-Doped CdO Probed by Photoemission Spectroscopy.” Physical Review B 55 (20): 13381–84.
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Authors

+ Dou, Y More by this author

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+ Fishlock, T More by this author

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Author

+ Egdell, R More by this author

Institution:

University of Oxford

Division:

MPLS

Department:

Chemistry

Sub department:

Inorganic Chemistry

Role:

Author

+ Law, D More by this author

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Author

+ Beamson, G More by this author

Role:

Author

Bibliographic Details

Journal:: Physical Review B More from this journal
Volume:: 55
Issue:: 20
Pages:: 13381-13384
Publication date:: 1997-05-15
ISSN:: 0163-1829

Item Description

Language:: English
Pubs id:: pubs:45623
UUID:: uuid:b438c900-58a6-4c84-93a0-aba3e2487edf
Local pid:: pubs:45623
Source identifiers:: 45623
Deposit date:: 2012-12-19

Terms of use

Copyright date:: 1997

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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