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Journal article

Ion-implantation-induced extended defect formation in (0001) and (11(2)over-bar0) 4H-SiC

Publication status:
Published

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Publisher copy:
10.1103/PhysRevB.71.165210

Authors


Wong-Leung, J More by this author
Linnarsson, MK More by this author
Svensson, BG More by this author
Cockayne, DJH More by this author
Journal:
PHYSICAL REVIEW B
Volume:
71
Issue:
16
Publication date:
2005-04-05
DOI:
EISSN:
1550-235X
ISSN:
1098-0121
URN:
uuid:b2bdb27f-6770-45f7-8932-89a076baef75
Source identifiers:
12076
Local pid:
pubs:12076

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