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Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments

Abstract:

Dislocation locking experiments have been used to investigate nitrogen-doped float-zone silicon (NFZ-Si). Experiments on NFZ-Si with a nitrogen concentration of 2.2 × 10 15 cm -3 were carried out at different annealing temperatures (550-830°C) for different annealing times (0-1500 hours) and experiments on NFZ-Si with a nitrogen concentration of 3 × 10 14 cm -3 were carried out at 600°C for 0-1200 hours. After an initial rise, the unlocking stress was found to saturate for all combinations of...

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Publisher copy:
10.1002/pssa.200460532

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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Role:
Author
Journal:
Physica Status Solidi (A) Applications and Materials Science
Volume:
202
Issue:
5
Pages:
926-930
Publication date:
2005-04-05
DOI:
EISSN:
1862-6319
ISSN:
1862-6300
URN:
uuid:b295a181-adf3-4f6d-b7bc-42eab093314d
Source identifiers:
176465
Local pid:
pubs:176465
Language:
English

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