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PHOTOLUMINESCENCE STUDY OF TWO-DIMENSIONAL CARRIERS IN THE PRESENCE OF INPLANE MAGNETIC-FIELDS

Abstract:

We have measured the effect of in-plane magnetic fields on the photoluminescence of 2D carriers confined in a modulation-doped GaAsAlGaAs MQW heterostructure. The most dramatic effect is a large increase, and eventual saturation at high fields, of the intensity of radiative recombination at interface acceptors (binding energy ∼ 10 meV). We explain this as a result of field-induced spreading of the confined wave functions toward the barriers. We show this behavior to be qualitatively consisten...

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Publication status:
Published

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Journal:
SURFACE SCIENCE
Volume:
170
Issue:
1-2
Pages:
624-628
Publication date:
1986-04-05
DOI:
ISSN:
0039-6028
URN:
uuid:b25164b8-b79d-4db8-82fd-873655eff126
Source identifiers:
78
Local pid:
pubs:78
Language:
English

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