- Abstract:
-
In recent years it has been shown that graphene oxide (GO) can be used to passivate silicon surfaces resulting in increased photocurrents in metal-insulator-semiconductor (MIS) tunneling diodes, and in improved efficiencies in Schottky-barrier solar cells with either metal or graphene barriers, however, the source of this passivation is still unclear. The suggested mechanisms responsible for the enhanced device performance include the dangling bond saturation at the surface by the diverse fun...
Expand abstract - Publication status:
- Published
- Peer review status:
- Peer reviewed
- Version:
- Publisher's Version
- Files:
-
-
(pdf, 1.0MB)
-
- Publisher copy:
- 10.1016/j.solmat.2018.08.002
-
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- Funding agency for:
- Bonilla, RS
- Publisher:
- Elsevier Publisher's website
- Journal:
- Solar Energy Materials and Solar Cells Journal website
- Volume:
- 187
- Pages:
- 189-193
- Publication date:
- 2018-08-10
- Acceptance date:
- 2018-08-02
- DOI:
- EISSN:
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1879-3398
- ISSN:
-
0927-0248
- Pubs id:
-
pubs:910062
- URN:
-
uri:b1a9dd8c-a1ed-4910-b9fd-b68bba57cf3c
- UUID:
-
uuid:b1a9dd8c-a1ed-4910-b9fd-b68bba57cf3c
- Local pid:
- pubs:910062
- Copyright holder:
- Elsevier B.V.
- Copyright date:
- 2018
- Notes:
- © 2018 Elsevier B.V. All rights reserved. Under a Creative Commons license.
Journal article
Graphene oxide films for field effect surface passivation of silicon for solar cells
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+ Engineering and Physical Sciences Research Council
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Consejo Nacional de Ciencia y Tecnologia
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