Journal article
Graphene oxide films for field effect surface passivation of silicon for solar cells
- Abstract:
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In recent years it has been shown that graphene oxide (GO) can be used to passivate silicon surfaces resulting in increased photocurrents in metal-insulator-semiconductor (MIS) tunneling diodes, and in improved efficiencies in Schottky-barrier solar cells with either metal or graphene barriers, however, the source of this passivation is still unclear. The suggested mechanisms responsible for the enhanced device performance include the dangling bond saturation at the surface by the diverse fun...
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- Publication status:
- Published
- Peer review status:
- Peer reviewed
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(Version of record, pdf, 1.0MB)
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- Publisher copy:
- 10.1016/j.solmat.2018.08.002
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Authors
Funding
+ Engineering and Physical Sciences Research Council
More from this funder
Funding agency for:
Bonilla, R
Grant:
EP/M022196/1
Consejo Nacional de Ciencia y Tecnologia
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Bibliographic Details
- Publisher:
- Elsevier Publisher's website
- Journal:
- Solar Energy Materials and Solar Cells Journal website
- Volume:
- 187
- Pages:
- 189-193
- Publication date:
- 2018-08-10
- Acceptance date:
- 2018-08-02
- DOI:
- EISSN:
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1879-3398
- ISSN:
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0927-0248
- Source identifiers:
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910062
Item Description
- Keywords:
- Pubs id:
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pubs:910062
- UUID:
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uuid:b1a9dd8c-a1ed-4910-b9fd-b68bba57cf3c
- Local pid:
- pubs:910062
- Deposit date:
- 2018-09-04
Terms of use
- Copyright holder:
- Elsevier BV
- Copyright date:
- 2018
- Notes:
- © 2018 Elsevier B.V. All rights reserved. Under a Creative Commons license.
- Licence:
- CC Attribution (CC BY)
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