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Graphene oxide films for field effect surface passivation of silicon for solar cells

Abstract:

In recent years it has been shown that graphene oxide (GO) can be used to passivate silicon surfaces resulting in increased photocurrents in metal-insulator-semiconductor (MIS) tunneling diodes, and in improved efficiencies in Schottky-barrier solar cells with either metal or graphene barriers, however, the source of this passivation is still unclear. The suggested mechanisms responsible for the enhanced device performance include the dangling bond saturation at the surface by the diverse fun...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Publisher's Version

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Publisher copy:
10.1016/j.solmat.2018.08.002

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Institution:
University of Oxford
Division:
MPLS Division
Department:
Materials
Role:
Author
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Consejo Nacional de Ciencia y Tecnologia More from this funder
Publisher:
Elsevier Publisher's website
Journal:
Solar Energy Materials and Solar Cells Journal website
Volume:
187
Pages:
189-193
Publication date:
2018-08-10
Acceptance date:
2018-08-02
DOI:
EISSN:
1879-3398
ISSN:
0927-0248
Pubs id:
pubs:910062
URN:
uri:b1a9dd8c-a1ed-4910-b9fd-b68bba57cf3c
UUID:
uuid:b1a9dd8c-a1ed-4910-b9fd-b68bba57cf3c
Local pid:
pubs:910062

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