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n-type doping in Cd2SnO4: A study by EELS and photoemission.

Abstract:
The influence of n-type doping on the electronic structure of Cd2SnO4 has been studied by electron-energyloss spectroscopy (EELS) and UV photoemission spectroscopy (UPS). In substitution on Cd sites or Sb substitution in Sn sites leads to the the appearance of well-defined plasmon loss peaks in EELS, with a maximum plasmon energy of just below 0,6 eV in Sb-doped material. A weak conduction-band feature is observed in UPS, the width of which is of the order expected from a simple free-electron model.
Publication status:
Published

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Publisher copy:
10.1103/physrevb.53.15405

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Institution:
University of Oxford
Department:
Oxford, MPLS, Chemistry, Inorganic Chemistry
Role:
Author
Journal:
Physical review. B, Condensed matter
Volume:
53
Issue:
23
Pages:
15405-15408
Publication date:
1996-06-05
DOI:
EISSN:
1095-3795
ISSN:
0163-1829
URN:
uuid:b169e580-94af-4aee-ba75-967ca05260a4
Source identifiers:
36301
Local pid:
pubs:36301
Language:
English

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