- Abstract:
- The influence of n-type doping on the electronic structure of Cd2SnO4 has been studied by electron-energyloss spectroscopy (EELS) and UV photoemission spectroscopy (UPS). In substitution on Cd sites or Sb substitution in Sn sites leads to the the appearance of well-defined plasmon loss peaks in EELS, with a maximum plasmon energy of just below 0,6 eV in Sb-doped material. A weak conduction-band feature is observed in UPS, the width of which is of the order expected from a simple free-electron model.
- Publication status:
- Published
- Publisher copy:
- 10.1103/physrevb.53.15405
-
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- Journal:
- Physical review. B, Condensed matter
- Volume:
- 53
- Issue:
- 23
- Pages:
- 15405-15408
- Publication date:
- 1996-06-05
- DOI:
- EISSN:
-
1095-3795
- ISSN:
-
0163-1829
- URN:
-
uuid:b169e580-94af-4aee-ba75-967ca05260a4
- Source identifiers:
-
36301
- Local pid:
- pubs:36301
- Language:
- English
- Copyright date:
- 1996
Journal article
n-type doping in Cd2SnO4: A study by EELS and photoemission.
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