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Dislocation imaging using ion beam induced charge

Abstract:
The recently developed ion beam induced charge technique has been used to image bands of misfit dislocations in a 4 μm thick epitaxial layer of Si 0.875Ge0.125 grown on a Si substrate. The smallest resolvable bandwidth is 0.8 μm under present conditions. The factors which presently limit this value, and methods for improving it are discussed.

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Publisher copy:
10.1063/1.109055

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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Role:
Author
Journal:
Applied Physics Letters
Volume:
62
Issue:
25
Pages:
3309-3311
Publication date:
1993-01-01
DOI:
ISSN:
0003-6951
URN:
uuid:b03bab8d-d5e2-45da-9e24-9f85072a730b
Source identifiers:
502435
Local pid:
pubs:502435
Language:
English

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