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Boron-Oxygen Defect Formation Rates and Activity at Elevated Temperatures

Abstract:

In this work the dependence of the slow boron-oxygen defect formation rate on excess carrier density is examined in p-type Cz silicon. In order to examine behavior at elevated temperatures simple models are developed to simulate the injection-level dependent lifetime of samples at a range of temperatures and active defect concentrations. These models are then verified against experimental data. Based on these models it is possible to clearly observe a quadratic dependence of defect formation ...

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Publication status:
In press
Peer review status:
Peer reviewed
Version:
Accepted manuscript

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Publisher copy:
10.1016/j.egypro.2016.07.070

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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Role:
Author
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Grant:
ARENA 1-060 and ARENA 2014/RND097
Publisher:
Elsevier Publisher's website
Journal:
SiliconPV 2016: 6th International Conference on Silicon Photovoltaics Journal website
Publication date:
2016-01-01
DOI:
EISSN:
1876-6102
ISSN:
1876-6102
URN:
uuid:b005d23a-e00e-4064-9d50-8ef7d03dbdc3
Source identifiers:
627882
Local pid:
pubs:627882

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