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Effects of temperature and ammonia flow rate on the chemical vapour deposition growth of nitrogen-doped graphene.

Abstract:

We doped graphene in situ during synthesis from methane and ammonia on copper in a low-pressure chemical vapour deposition system, and investigated the effect of the synthesis temperature and ammonia concentration on the growth. Raman and X-ray photoelectron spectroscopy was used to investigate the quality and nitrogen content of the graphene and demonstrated that decreasing the synthesis temperature and increasing the ammonia flow rate results in an increase in the concentration of nitrogen ...

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Publication status:
Published

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Publisher copy:
10.1039/c4cp02132k

Authors


Murdock, AT More by this author
Nemes-Incze, P More by this author
Nicholls, RJ More by this author
Pollard, AJ More by this author
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Publisher:
Royal Society of Chemistry
Journal:
Physical chemistry chemical physics : PCCP
Volume:
16
Issue:
36
Pages:
19446-19452
Publication date:
2014-09-05
DOI:
EISSN:
1463-9084
ISSN:
1463-9076
URN:
uuid:af474902-8abe-44c4-9a92-9625adf5ae2c
Source identifiers:
479608
Local pid:
pubs:479608
Language:
English

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