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Influence of point defects on the near edge structure of hexagonal boron nitride

Abstract:

Hexagonal boron nitride (hBN) is a wide-band-gap semiconductor with applications including gate insulation layers in graphene transistors, far-ultraviolet light emitting devices and as hydrogen storage media. Due to its complex microstructure, defects in hBN are challenging to identify. Here, we combine x-ray absorption near edge structure (XANES) spectroscopy with ab initio theoretical modeling to identify energetically favorable defects. Following annealing of hBN samples in vacuum and oxyg...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Accepted manuscript

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Publisher copy:
10.1103/PhysRevB.96.144106

Authors


McDougall, NL More by this author
Partridge, JG More by this author
More by this author
Institution:
University of Oxford
Division:
MPLS Division
Department:
Materials
McCulloch, DG More by this author
National Computational Infrastructure More from this funder
Publisher:
American Physical Society Publisher's website
Journal:
Physical Review B Journal website
Volume:
96
Issue:
14
Pages:
Article 144106
Publication date:
2017-10-11
Acceptance date:
2017-09-19
DOI:
EISSN:
2469-9969
ISSN:
2469-9950
Pubs id:
pubs:738473
URN:
uri:ad277a78-8f65-4fa0-9473-e0c6973c7880
UUID:
uuid:ad277a78-8f65-4fa0-9473-e0c6973c7880
Local pid:
pubs:738473
Keywords:

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