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Terahertz emission and lifetime measurements of ionimplanted semiconductors: Experiment and simulation

Abstract:
The spectral width of terahertz emission from ion-implanted terahertz emitters increases with ion damage, owing to ultrafast carrier capture. Carrier dynamics simulations reinforce these findings. Optical-pump, terahertz-probe experiments confirm the subpicosecond lifetimes of these materials. © 2006 Optical Society of America.

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Publisher:
Optical Society of America
Journal:
Optics InfoBase Conference Papers More from this journal
Publication date:
2006-01-01
EISSN:
2162-2701
Language:
English
Pubs id:
pubs:463633
UUID:
uuid:ab9c9d54-fa7e-4718-9604-780645c10f18
Local pid:
pubs:463633
Source identifiers:
463633
Deposit date:
2014-06-17

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