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Nanoelectromechanical switch with low voltage drive

Abstract:

The triode structure vertical carbon nanotube based nanoelectromechanical switch shows excellent low voltage drive (∼4.5 V), owing to its vertical gate and the narrow gap between structural elements. The insulator deposition and the selective etching process steps simplify fabrication through self-alignment. The thickness of the insulator determines the width of the gap and the etching process, used to produce the vertical gate, removes the need for a complicated lithography step. The low dri...

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Publication status:
Published

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Publisher copy:
10.1063/1.2983743

Authors


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Institution:
University of Oxford
Division:
MPLS
Department:
Engineering Science
Role:
Author
Journal:
APPLIED PHYSICS LETTERS More from this journal
Volume:
93
Issue:
11
Pages:
113105-113105
Publication date:
2008-09-15
DOI:
ISSN:
0003-6951
Language:
English
Pubs id:
pubs:389144
UUID:
uuid:a8f907c8-ff34-42dd-bb20-0cd3f064b6a6
Local pid:
pubs:389144
Source identifiers:
389144
Deposit date:
2013-11-16

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