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Journal article

Growth, structural and optical properties of high quality gaAs nanowires for optoelectronics

Abstract:: We investigate how growth parameters may be chosen to obtain high quality GaAs nanowires suitable for optoelectronic device applications. Growth temperature and precursor flows have a significant effect on the morphology, crystallographic quality, intrinsic doping and optical properties of the resulting nanowires. Significantly, we find that low growth temperature and high arsine flow rate improve nanowire optical properties, reduce carbon impurity incorporation and drastically reduce planar ...
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APA Style

Joyce, H., Gao, Q., Kim, Y., Tan, H., Jagadish, C., Zhang, X., Zou, J., Guo, Y., Fickenscher, M., Perera, S., Hoang, T., Smith, L., Jackson, H., & Jan, M. (2008). Growth, structural and optical properties of high quality gaAs nanowires for optoelectronics. 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO, 59–62.

MLA Style

Joyce, H., et al. “Growth, Structural and Optical Properties of High Quality GaAs Nanowires for Optoelectronics.” 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO, 2008, pp. 59–62.

Chicago Style

Joyce, H, Q Gao, Y Kim, H Tan, C Jagadish, X Zhang, J Zou, et al. 2008. “Growth, Structural and Optical Properties of High Quality GaAs Nanowires for Optoelectronics.” 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO, 59–62.
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Publisher copy:: 10.1109/NANO.2008.25

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+ Gao, Q More by this author

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+ Kim, Y More by this author

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+ Jagadish, C More by this author

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Bibliographic Details

Journal:: 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO
Pages:: 59-62
Publication date:: 2008-01-01
DOI:: 10.1109/NANO.2008.25

Item Description

Pubs id:: pubs:172743
UUID:: uuid:a833f9bc-3b19-4502-9269-4f675af9cb55
Local pid:: pubs:172743
Source identifiers:: 172743
Deposit date:: 2012-12-19

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Copyright date:: 2008

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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