Thesis
A theoretical investigation of gas source growth of the Si(001) surface
- Abstract:
-
The growth of the Si(001) surface from gas sources such as disilane is technologically important, as well as scientifically interesting. The aspects of growth covered are: the clean surface, its defects and steps; the action of bismuth, a surfactant; the diffusion behaviour of hydrogen in different environments; and the entire pathway for formation of a new layer of silicon from adsorption of fragments of disilane to nucleation of dimer strings. The theoretical methods used, density func...
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Authors
Contributors
+ Briggs, G
Division:
MPLS
Department:
Materials
Role:
Supervisor
+ Pettifor, D
Division:
MPLS
Department:
Materials
Role:
Supervisor
Funding
+ Engineering and Physical Sciences Research Council
More from this funder
Funding agency for:
Bowler, D
Bibliographic Details
- Publication date:
- 1997
- Type of award:
- DPhil
- Level of award:
- Doctoral
- Awarding institution:
- University of Oxford
Item Description
- Language:
- English
- Keywords:
- Subjects:
- UUID:
-
uuid:a817986f-114d-4a8a-8001-767f795d0e55
- Local pid:
- ora:6044
- Deposit date:
- 2012-02-02
Terms of use
- Copyright holder:
- David Bowler
- Copyright date:
- 1997
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