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A theoretical investigation of gas source growth of the Si(001) surface

Abstract:

The growth of the Si(001) surface from gas sources such as disilane is technologically important, as well as scientifically interesting. The aspects of growth covered are: the clean surface, its defects and steps; the action of bismuth, a surfactant; the diffusion behaviour of hydrogen in different environments; and the entire pathway for formation of a new layer of silicon from adsorption of fragments of disilane to nucleation of dimer strings. The theoretical methods used, density func...

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Research group:
Materials Modelling Laboratory
Oxford college:
Wolfson College
Role:
Author
More by this author
Division:
MPLS
Department:
Materials
Role:
Author

Contributors

Division:
MPLS
Department:
Materials
Role:
Supervisor
Division:
MPLS
Department:
Materials
Role:
Supervisor
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Name:
Engineering and Physical Sciences Research Council
Funding agency for:
Bowler, D
Publication date:
1997
Type of award:
DPhil
Level of award:
Doctoral
Awarding institution:
University of Oxford
Language:
English
Keywords:
Subjects:
UUID:
uuid:a817986f-114d-4a8a-8001-767f795d0e55
Local pid:
ora:6044
Deposit date:
2012-02-02

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