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TIME-RESOLVED EXCITON PHOTOLUMINESCENCE IN GaSe AND GaTe.

Abstract:

Time-resolved photoluminescence measurements of the layered semiconductors GaSe and GaTe have been made using a mode-locked dye laser and a synchronously scanning streak camera. It is shown that at low excitation densities (10**1**5-10**1**7 cm** minus **3) exciton dynamics is dominated by trapping at defects. A rate equation model is developed that describes exciton formation, recombination and trapping. At 4 K we determine free-exciton recombination times of 200 ps for GaTe and 350 ps for G...

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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
Role:
Author
Journal:
Journal of physics. C. Solid state physics
Volume:
20
Issue:
36
Pages:
6175-6187
Publication date:
1987-01-01
ISSN:
0022-3719
URN:
uuid:a80d9e32-866e-4940-961f-57a09cdd41d3
Source identifiers:
134650
Local pid:
pubs:134650
Language:
English

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