- Abstract:
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Electron beam induced current (EBIC) and atom probe tomography (APT) were used in this study to determine electrical activities and impurity compositions at extended defects in multicrystalline silicon (mc-Si) samples. The results provide, for the first time, information regarding the chemical species present at defects whose electrical activity has previously been measured.
A new APT specimen fabrication process was developed with the ability to select a specific defect for APT ana...
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- Publication date:
- 2015
- Type of award:
- DPhil
- Level of award:
- Doctoral
- Awarding institution:
- Oxford University, UK
- URN:
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uuid:a803fada-2296-41c3-9d96-864c186957a2
- Local pid:
- ora:12233
- Language:
- English
- Keywords:
- Subjects:
- Copyright holder:
- Chalothorn Lotharukpong
- Copyright date:
- 2015
Thesis
Defect characterisation in multi-crystalline silicon
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