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Thesis

Defect characterisation in multi-crystalline silicon

Abstract:

Electron beam induced current (EBIC) and atom probe tomography (APT) were used in this study to determine electrical activities and impurity compositions at extended defects in multicrystalline silicon (mc-Si) samples. The results provide, for the first time, information regarding the chemical species present at defects whose electrical activity has previously been measured.

A new APT specimen fabrication process was developed with the ability to select a specific defect for APT ana...

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Institution:
University of Oxford
Research group:
Semiconductor group
Oxford college:
St Cross College
Department:
Mathematical,Physical & Life Sciences Division - Materials
Role:
Author

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Role:
Supervisor
Role:
Supervisor
Publication date:
2015
Type of award:
DPhil
Level of award:
Doctoral
Awarding institution:
Oxford University, UK
URN:
uuid:a803fada-2296-41c3-9d96-864c186957a2
Local pid:
ora:12233

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