Defect-Free GaAs/AlGaAs Core-Shell Nanowires on Si Substrates

Journal article

We report straight and vertically aligned defect-free GaAs nanowires grown on Si(111) substrates by metal-organic chemical vapor deposition. By deposition of thin GaAs buffer layers on Si substrates, these nanowires could be grown on the buffer layers with much less stringent conditions as otherwise imposed by epitaxy of III-V compounds on Si. Also, crystal-defect-free GaAs nanowires were grown by using either a two-temperature growth mode consisting of a short initial nucleation step under h...

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Authors: Kang, J; Gao, Q; Joyce, H; Tan, H; Jagadish, C

• Publication status: Published
• Journal: CRYSTAL GROWTH and DESIGN
• Volume: 11
• Issue: 7
• Pages: 3109-3114
• Publication date: 2011-07-01
• DOI: 10.1021/cg2003657
• EISSN: 1528-7505
• ISSN: 1528-7483
• Language: English