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Conference item

LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD

Publication status:
Published

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Journal:
MICROSCOPY OF SEMICONDUCTING MATERIALS 1989 More from this journal
Volume:
100
Pages:
331-336
Publication date:
1989-01-01
Event title:
CONF ON MICROSCOPY OF SEMICONDUCTING MATERIALS
ISBN:
0854980563
Keywords:
Pubs id:
pubs:20555
UUID:
uuid:a73bbcb1-5119-4fbf-93c8-6ca6ecf1e733
Local pid:
pubs:20555
Source identifiers:
20555
Deposit date:
2012-12-19

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