- Abstract:
- The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 ± 120 cm(2)/(V s)). This is due to the weak influence of surface traps with respect to other III-V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth.
- Publication status:
- Published
- Publisher copy:
- 10.1021/nl301898m
-
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- Journal:
- Nano letters
- Volume:
- 12
- Issue:
- 9
- Pages:
- 4600-4604
- Publication date:
- 2012-09-05
- DOI:
- EISSN:
-
1530-6992
- ISSN:
-
1530-6984
- URN:
-
uuid:a6c24507-a434-4756-889d-4bef91f097af
- Source identifiers:
-
349775
- Local pid:
- pubs:349775
- Language:
- English
- Keywords:
- Copyright date:
- 2012
Journal article
Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires.
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