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Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires.

Abstract:
The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 ± 120 cm(2)/(V s)). This is due to the weak influence of surface traps with respect to other III-V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth.
Publication status:
Published

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Publisher copy:
10.1021/nl301898m

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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics
Role:
Author
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Journal:
Nano letters
Volume:
12
Issue:
9
Pages:
4600-4604
Publication date:
2012-09-05
DOI:
EISSN:
1530-6992
ISSN:
1530-6984
URN:
uuid:a6c24507-a434-4756-889d-4bef91f097af
Source identifiers:
349775
Local pid:
pubs:349775

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