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A PHOTOEMISSION-STUDY OF ELECTRON-STATES IN SB-ION IMPLANTED TIO2(110)

Abstract:
Ion implantation has been used to dope single-crystal TiO2(110) in the near-surface region. The Sb dopant quenches an electronic state at about 1 eV binding energy usually observed in photoemission from undoped TiO2 and produces a new electronic surface state toward the bottom of the bulk bandgap. This is attributed to a 5s- ;5p hybrid orbital localised on surface Sb ions. © 1995.
Publication status:
Published

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Journal:
APPLIED SURFACE SCIENCE
Volume:
90
Issue:
3
Pages:
383-387
Publication date:
1995-11-05
DOI:
ISSN:
0169-4332
URN:
uuid:a6b716a6-fb97-45d9-ace9-62ff21165aa2
Source identifiers:
45036
Local pid:
pubs:45036
Language:
English

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