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Mini-gaps and novel giant negative magnetoresistance in InAs/GaSb semimetallic superlattices

Abstract:

We have studied the temperature dependence of the magnetoresistance of semimetallic InAs/GaSb structures with magnetic field applied parallel to the layers. We present the first unambiguous evidence for the presence of a mini-gap at the crossing point between the electron and hole dispersion relations. The resistivity is found to change from semiconductor-like behaviour with a strong temperature dependence at low parallel magnetic fields to that of a semimetal with a weak temperature dependen...

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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
Journal:
PHYSICA E More from this journal
Volume:
2
Issue:
1-4
Pages:
363-367
Publication date:
1998-07-01
Event title:
8th International Conference on Modulated Semiconductor Structures
DOI:
ISSN:
1386-9477
Keywords:
Pubs id:
pubs:24249
UUID:
uuid:a6b451c5-5824-4b8a-b4eb-a536fcf5faca
Local pid:
pubs:24249
Source identifiers:
24249
Deposit date:
2012-12-19

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