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Journal article

Cryogenic instrumentation for fast current measurement in a silicon single electron transistor

Publication status:
Published

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Publisher copy:
10.1063/1.3191671

Authors


Morrissey, QR More by this author
Freeman, EJ More by this author
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Journal:
JOURNAL OF APPLIED PHYSICS
Volume:
106
Issue:
3
Pages:
033705-033705
Publication date:
2009-08-01
DOI:
ISSN:
0021-8979
URN:
uuid:a669f550-8bc3-4d94-b27d-36d14d13c84e
Source identifiers:
83902
Local pid:
pubs:83902

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