We show that deep level doping of Czochralski-grown silicon wafers is capable of providing high resistivity handle wafers suitable for radio frequency integrated circuits, in particular integrated passive devices (IPD) and 3D integration. Starting from n-type 50 Ωcm Czochralski silicon wafers, we use Au ion implantation and subsequent annealing to increase the resistivity of the wafers to over 10 k Ωcm at room temperatures in a controlled way. Coplanar waveguides fabricated on the implanted w...