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Deep level impurity engineered semi-insulating Cz-silicon as microwave substrates

Abstract:

We show that deep level doping of Czochralski-grown silicon wafers is capable of providing high resistivity handle wafers suitable for radio frequency integrated circuits, in particular integrated passive devices (IPD) and 3D integration. Starting from n-type 50 Ωcm Czochralski silicon wafers, we use Au ion implantation and subsequent annealing to increase the resistivity of the wafers to over 10 k Ωcm at room temperatures in a controlled way. Coplanar waveguides fabricated on the implanted w...

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Pages:
394-397
Host title:
European Microwave Week 2011: "Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011
Publication date:
2011-01-01
Source identifiers:
307551
ISBN:
9782874870231
Keywords:
Pubs id:
pubs:307551
UUID:
uuid:a6200b40-c256-4ac0-b62c-c7fb773d3d86
Local pid:
pubs:307551
Deposit date:
2015-01-15

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