Conference item
Deep level impurity engineered semi-insulating Cz-silicon as microwave substrates
- Abstract:
-
We show that deep level doping of Czochralski-grown silicon wafers is capable of providing high resistivity handle wafers suitable for radio frequency integrated circuits, in particular integrated passive devices (IPD) and 3D integration. Starting from n-type 50 Ωcm Czochralski silicon wafers, we use Au ion implantation and subsequent annealing to increase the resistivity of the wafers to over 10 k Ωcm at room temperatures in a controlled way. Coplanar waveguides fabricated on the implanted w...
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Bibliographic Details
- Pages:
- 394-397
- Host title:
- European Microwave Week 2011: "Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011
- Publication date:
- 2011-01-01
- Source identifiers:
-
307551
- ISBN:
- 9782874870231
Item Description
- Keywords:
- Pubs id:
-
pubs:307551
- UUID:
-
uuid:a6200b40-c256-4ac0-b62c-c7fb773d3d86
- Local pid:
- pubs:307551
- Deposit date:
- 2015-01-15
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- Copyright date:
- 2011
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